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| 6MBP50RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series packages * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 50A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 50 100 50 357 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms DC One transistor Collector power dissipation Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=50A -Ic=50A Min. - - - Typ. - - - Max. 1.0 2.6 3.0 Unit mA V V 6MBP50RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Symbol Power supply current of P-line side Pre-driver(one unit) Iccp ICCN Power supply current of N-line side three Pre-driver Vin(th) Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Item Condition fsw=0 to 15kHz Tc=-20 to 100C *7 fsw=0 to 15kHz Tc=-20 to 100C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125C Tj=25C Fig.2 IGBT-IPM Tj=25C Fig.3 Min. Typ. Max. 3 18 10 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 110 125 20 150 20 75 10 11.0 12.5 0.2 1.5 2 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=50A, VDC=600V IF=50A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.35 0.85 Unit C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 6MBP50RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 6MBP50RA120 Characteristics (Representative) Control Circuit P o w e r s u p p ly cu rre n t v s . S w itch in g fre q u e n c y T j= 1 0 0 C 40 P -sid e V cc= 17V V cc= 15V V cc= 13V IGBT-IPM In p u t s ig n a l th re sh o ld vo lta g e vs . P o w e r su p p ly vo lta g e 2 .5 T j= 2 5 C T j= 1 2 5 C P o w e r s u p ply c urre n t : Ic c (m A ) Inp ut sign al th re sh old vo ltag e 35 30 25 20 15 N -sid e 2 : V in(on ),V in (o ff) (V ) } V in(off) 1 .5 } V in (on) 1 V cc= 17V 10 5 0 V cc= 15V V cc= 13V 0 .5 0 5 10 15 20 25 0 12 13 14 15 16 17 18 P o w er su pply volta ge : V cc (V ) S w itc hing fre qu e nc y : fs w (k H z) Under voltage vs. Junction temperature 14 12 1 U n d e r vo lta g e h y ste ris is v s. J n c tio n te m p e ra tu re U nd er vo ltage h yste risis : V H (V) Under voltage : VUVT (V) 0.8 10 8 6 4 0.6 0.4 0.2 2 0 0 20 40 60 80 100 120 140 20 40 60 80 10 0 12 0 14 0 Junction temperature : Tj (C) Jun ction te m p era tu re : T j (C ) A la rm h o ld tim e vs . P o w e r s u p p ly vo lta g e O v e r he a tin g p r ote c tio n : Tc OH,TjO H ( C) 3 O ve r h e a tin g c h a ra cte ris tics Tc OH ,T jO H ,TcH ,T jH vs . Vcc 2 00 TjOH O H h y s te r is is : Tc H,TjH ( C) 1 50 Tc OH 1 00 A la rm h o ld tim e : tA L M (m S e c ) 2.5 T j=12 5C 2 T j=2 5C 1.5 1 50 Tc H,TjH 0.5 0 12 13 14 15 16 17 18 0 12 13 P ow e r s up p ly v oltag e : V c c (V ) 14 15 16 17 Po w e r s u p ply v o ltag e : V c c ( V ) 18 6MBP50RA120 Inverter IGBT-IPM C o lle c to r c u rre n t v s . C o lle c to r-E m itte r vo lta g e Tj= 2 5 C 80 V cc = 1 7V V cc = 1 3V 60 V cc = 1 5V C ollecto r current vs. C ollector-E m itte r volta ge Tj= 1 25C 80 70 V cc= 17V V cc= 13V V cc= 15V 70 C ollec to r C u rre nt : Ic (A ) C ollector C urrent : Ic (A ) 60 50 40 30 20 10 0 50 40 30 20 10 0 0 0 .5 1 1 .5 2 2 .5 3 0 0.5 1 1.5 2 2.5 3 C olle c to r-E m itte r v o lta g e : V c e (V ) C ollector-Em itter voltage : Vce (V ) S w itc h in g tim e vs . C o lle c to r c u rre n t E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 C 1 000 0 1 000 0 S witch in g tim e vs . Co lle cto r c u rre n t E d c =6 0 0 V ,V cc= 1 5 V ,Tj= 1 2 5 C S w itc hin g tim e : ton ,to ff,tf (n S e c ) S w itch in g tim e : ton ,to ff,tf (n S e c) to ff to ff to n to n 100 0 100 0 tf tf 10 0 10 0 10 0 10 20 30 40 50 60 70 80 10 0 10 20 30 40 50 60 70 80 C o llec tor c u rre nt : Ic (A ) C o lle ctor cu rre nt : Ic (A ) F o rw a rd c u rre n t vs. F o rwa rd vo lta g e 80 70 12 5C 2 5C R e ve rse re co ve ry ch a ra cte ristics trr,Irr vs. IF 100 0 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 R e v ers e rec ov e ry c urre n t : Irr(A ) R ev e rs e re c o v ery tim e : trr(n S e c ) F orwa rd C u rre n t : If (A ) trr12 5C trr2 5C 10 0 Irr12 5C Irr2 5C 10 0 10 20 30 40 50 60 70 80 Fo rwa rd vo lta g e : V f (V ) F o rw ard c u rre nt : IF (A ) 6MBP50RA120 IGBT-IPM T ra nsie nt the rm a l re sistance 1 T h e rm a l re sista n ce : R th (j-c ) (C /W ) FW D 70 0 R e ve rse d b ia s e d s a fe o p e ra tin g a re a V cc = 1 5 V ,T j < 1 2 5 C = IG B T C o lle c to r c u rre nt : Ic (A ) 60 0 50 0 40 0 SC SOA (no n-rep etitive pulse) 0 .1 30 0 20 0 10 0 RB SOA (R ep etitive pulse) 0 20 0 40 0 60 0 80 0 100 0 120 0 140 0 0.01 0 .0 01 0.01 0 .1 1 P u lse w idth :P w (se c) 0 C o lle cto r-E m itte r v o lta g e : V c e (V ) P o we r d e ratin g fo r IG B T (p e r d evice ) 40 0 150 P o w e r d e ra tin g fo r F W D (p e r d e vic e ) C o lle c te r P o w er D is s ip ation : P c (W ) C o lle cte r Po w er D iss ip ation : P c (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 20 40 60 80 10 0 12 0 14 0 16 0 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 C a se T e m p erature : T c (C ) C a s e T e m p era ture : T c (C ) S w itch in g L os s vs. C olle c to r C u rre n t E d c =6 0 0V ,V cc= 1 5 V ,Tj= 2 5C S w itc h in g lo s s : E o n,E o ff,E rr (m J /c y c le) 25 25 S w itc h in g L o s s v s. C o lle c to r C u rre n t E d c = 6 0 0 V ,V c c= 1 5 V ,Tj= 1 2 5 C S w itc h in g lo ss : E o n,E o ff,E rr (m J /c y c le) 20 20 Eo n 15 Eo n 10 Eo ff 5 E rr 0 0 10 20 30 40 50 60 70 80 15 10 E o ff 5 E rr 0 0 10 20 30 40 50 60 70 80 C o lle c tor c u rre nt : Ic (A ) C o lle c tor cu rre nt : Ic (A ) 6MBP50RA120 IGBT-IPM O ver curre nt p ro te ction vs. Ju nctio n te m peratu re Vcc=15 V 2 00 O ve r cu rre nt p rotec tio n level : Ioc(A ) 1 50 1 00 50 0 0 20 40 60 80 1 00 Ju n ction te m p e ra tu re : T j(C ) 1 20 1 40 |
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